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| inchange semiconductor product specification silicon npn power transistors 2SD1049 description ? with to-3pn package ? high current, ? high speed switching ? high reliability applications ? switching regulators ?motor controls ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 25 a i b base current 5 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 1.55 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1049 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 80 v v (br)cbo collector-base breakdown voltage i c =0.1ma ;i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =25a; i b =2.5a 1.5 v v besat base-emitter saturation voltage i c =25a ;i b =2.5a 2.0 v i cbo collector cut-off current v cb =120v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =25a ; v ce =5v 20 switching times t on turn-on time 1.0 | s t stg storage time 2.5 | s t f fall time i c =25a i b1 =-i b2 =2.5a r l =3 ? ;p w =20 | s; duty 2% 0.4 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD1049 package outline fig.2 outline dimensions |
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